carrier n. 1.运送人,搬夫;负荷者;使役,〔美国〕信差,邮递员;送报人;〔英国〕运输行,运输业者。 2.传书鸽,信鸽。 3.(车后的)货架;吊架;托架。 4.水管,引水沟。 5.运载工具;搬运机;移动滑车。 6.【医学】带菌者,病媒。 7.航空母舰。 8.【电学】载波;载流子;【拓】承载子;【化学】载体,填料;导染剂。 a mail [letter] carrier邮递员。 a band carrier传送带。
Determination of carrier concentration in gallium arsenide by the plasma resonance minimum 砷化镓中载流子浓度等离子共振测量方法
Gallium arsenide epitaxial layer - determination of carrier concentration - voltage - capacitance method 砷化镓外延层载流子浓度电容-电压测量方法
In addition , the optimized carrier concentration in the membrane was determined . the bsa - fixed membranes were used to remove lipophilic toxins , bilirubin , from the simulation plasma 将所制备的促进传递膜应用于体外脱毒的模拟实验,该膜对亲脂性毒物胆红素具有较高的清除性能。
The results indicate that with increasing the thickness of fes2 thin films , the electrical conductivity , the carrier concentration and the absorption coefficient decrease 结果表明,随着薄膜厚度的增加, fes2的电阻率升高,载流子浓度下降,在高吸收区fes2薄膜的光吸收系数也呈下降趋势。
The experiments show : growth temperature is one of the key growth parameter by which the surface morphology , alloy composition , crystalline quality , mobility and carrier concentration are influenced 实验表明:生长温度是一个重要的生长参数,它对外延层的表面形貌、组分、结晶质量、迁移率、载流子浓度有着很大影响。
The influence of sulfidation pressure on microstructure is insignificant . the electrical resistivity is lower because the carrier concentration is very higher for the films annealed at lookpa sulfidation pressure 硫化压力的变化对薄膜的组织结构影响不明显,当硫化压力为100kpa时,薄膜具有较高的载流子浓度及较低的薄膜电阻率。
And the factors affecting the permeation coefficient which include original carrier concentration , the original ph of feed solution and membrane types have also been discussed when the membrane phase contains membrane solvent and carrier 当膜相中含有载体时,考察了载体初始浓度、料液相初始ph值和膜类型等因素对渗透系数的影响。
The measurements on composition distribution , carrier concentration and mobility revealed that most of its properties could not satisfy the requirements of ir detector at the as - grown state . further treatments are necessary 测试了晶体的光学及电学性能,根据测试结果,仅有部分生长态的晶片可以满足红外探测器的要求,还需对晶体进行后续处理以提高其性能。
Electrochemistry c - v method was employed to measure the carrier concentration profile distribution of samples , discovered that the carrier concentration decreased with increasing of the diffusion depth , and the peak of concentration located at 0 . 25 m beneath the surface 利用电化学c - v法对样品的载流子浓度的纵向分布进行了研究,发现在距离样品表面0 . 25 m处载流子浓度达到最大。
Here the conductance , carrier concentration and hall mobility ect parameters of er doped cdte films have been given . using seto model , we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance 讨论了不同er离子注入量对硅基底上沉积的cdte薄膜结构和光电性能的影响,并具体给出了掺杂cdte多晶薄膜的电导、载流子浓度及迁移率等参数值。